Size: 156.75x156.75mm
Thinkness: 160μm±20μm
Front(-)5×0.7mm straight section barbus, Blue SiNx anti-reflecting coating
Back(+) Full aluminum cover on the back; 5×1.7mm segmented back electrode
Size: 158.75x158.75mm
Thinkness: 160μm±20μm
Front(-)5×0.7mm straight section barbus, Blue SiNx anti-reflecting coating
Back(+) Full aluminum cover on the back; 5×1.7mm segmented back electrode 8
Size: 166x166mm
Thinkness: 160μm±20μm
Front(-)9×0.08mm straight section barbus, Blue SiNx anti-reflecting coating
Back(+) 1.6mm±0.05mm aluminum busbar mosaic 6 segments and 1.7mm siliver pad
Size: 182mm×182mmm(φ247mm±0.5mm)
Thinkness: 165μm±17.5μm
Front(-): Silicon oxide + blue silicon nitride compound anti-reflection coating(PID Free);Half- cut design;
Back(+) : Passivated layer (AlOx and SiNx) and Rear Contact (Al).
Size: 210mm×210mmm(φ295mm±0.5mm)
Thinkness: 165μm±17.5μm
Front(-): Silicon oxide + blue silicon nitride compound anti-reflection coating(PID Free);Half- cut design;
Back(+) : Passivated layer (AlOx and SiNx) and Rear Contact (Al).
Size: 182.2×182.2±0.5mm(φ247mm±0.5mm)
Thinkness: 130μm±13μm
Front(-)16*0.05±0.035 mm
Back(+) 16*0.05±0.035 mm
Size: 210mmX182mm±0.25mm, φ 272mm±0.25mm
Thinkness: 130μm±13μm
Front(-)16BB, 14pads, 168 fingers Barbus wide0.03±0.02 mm
Back(+) 16BB, 14pads, 192 fingers Barbus wide 0.03±0.02 mm
Size: 210mmX210mm±0.5mm , φ 295mm±0.5mm
Thinkness: 130μm±13μm
Front(-)18BB, 14pads, 168 fingers Barbus wide0.03±0.02 mm
Back(+) 18BB, 14pads, 192 fingers Barbus wide 0.03±0.02 mm
Size: 182mmX182mm±0.5mm , φ 247mm±0.5mm
Thinkness: 130μm±13μm
Front(-)0BB
Back(+) 19BB, 14pads, 192 fingers Barbus wide 9.58±0.02 mm
– Material: Mainly made of silicon crystals, including monocrystalline, polycrystalline and amorphous silicon.
– Features:
o Monocrystalline: High efficiency (20%-24%), suitable for high-end applications.
o Monocrystalline silicon: High efficiency (20%-24%), suitable for high-end applications.
o Polycrystalline silicon: Cost-effective, slightly lower efficiency (15%-18%).
o Polycrystalline silicon: cost-effective, slightly lower efficiency (15%-18%).
o Amorphous silicon: low cost, low efficiency.
o Amorphous silicon: low cost, high flexibility, but lower efficiency (~10%-12%).
– Applications: Most common, widely used in residential, commercial and industrial applications.
– Material: Thin film materials such as amorphous silicon, copper indium gallium selenide (CIGS) and cadmium telluride (CdTe) are used.
– Features.
o Lightweight and flexible, can be used in special scenarios (e.g. building integration).
o Lower conversion efficiency (10%-15%), but low cost.
– Applications: Mobile devices, rooftops or other scenarios with high weight requirements.
– Material: Made of organic polymers or molecular materials.
– Features.
o Low manufacturing cost, lightweight, bendable, variety of colors.
o Low efficiency (5%-10%), stability needs to be improved.
– Applications: Wearable devices, portable devices, etc.
– Material: Organic-inorganic hybrid material using a chalcogenide structure.
– Features.
o Rapidly increasing laboratory efficiency (over 25%), low cost.
o Currently, stability and scale-up are still to be achieved.
– Applications: Potential future mainstream technology, can be stacked with silicon-based cells.
– Material: Gallium Arsenide (GaAs), Indium Phosphide (InP) and other III-V semiconductor materials are used.
– Characteristics: o Very high conversion efficiency (30%).
o Very high conversion efficiency (over 30%) for high-end applications. o Expensive to manufacture.
o Expensive to manufacture.
– Applications: Aerospace, such as satellites and space stations.
These categorizations are based on material properties, allowing you to choose the right type of solar cell for your application. If you are interested in the details or application of a certain material, you can discuss further!
– Characteristics: Improved photovoltaic performance based on N-type silicon.
– Representative technologies: o TOPCon (Tunneling Oxidation Passivation Contact)
o TOPCon (Tunneling Oxidation Passivation Contact) cells: High conversion efficiency and good surface passivation.
o HJT (Heterojunction) cells: Combination of crystalline and amorphous silicon technologies.
o HJT (Hetero Junction) Cell: Combining crystalline and amorphous silicon technologies, strong bifacial power generation capability.
o IBC (Back Contact Cell): Electrodes are placed on the back side to increase the front side light absorption.
– Advantages: High efficiency, low attenuation, good low light performance.
– Disadvantages: Complicated manufacturing process and high cost.
– Characteristics: Based on thin-film materials.
– Representative technologies:
o Amorphous silicon thin film cells.
o Copper indium gallium selenide (CIGS) cells.
o Cadmium telluride (CdTe) cells.
– Advantages: Flexible, lightweight, suitable for building integration.
– Disadvantages: Lower conversion efficiency, not suitable for large-scale terrestrial power generation applications.
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